The integrated gate-commutated thyristor (IGCT) is a power semiconductor electronic device, used for switching electric current in industrial equipment. It is related to the gate turn-off (GTO) thyristor. It was jointly developed by Mitsubishi and ABB. Comparison of IGCT and IGBT for the use in the. Modular Multilevel Converter for HVDC applications. Martin Buschendorf, Jens Weber, Steffen Bernet. As power semiconductor devices are the key components of hybrid DC circuit breakers (HCBs), how to select suitable devices is critical for the whole HCB de.
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They typically have a reverse breakdown rating in the tens of volts. From Wikipedia, the free encyclopedia.
The main kgct are a reduction in cell size, and a much more substantial gate connection with much lower inductance in the gate drive circuit and drive circuit connection. The main applications are in variable- frequency invertersdrives and traction. A-IGCTs are used where either a reverse conducting diode is applied in parallel for example, in voltage source inverters or where reverse voltage would never occur for example, in switching power supplies or DC traction choppers.
Ignt Read Edit View history. Iybt large contact area and short distance reduce both the inductance and resistance of the connection. The IGCT’s much faster turn-off times compared to the GTO’s allows it to operate at higher frequencies—up to several kHz for very short periods of time.
The typical application for symmetrical IGCTs is in current source inverters. The wafer device is similar to a gate turn-off thyristor GTO. Retrieved from ” https: Multiple IGCTs can be connected in series or in parallel for higher power applications.
Integrated gate-commutated thyristor
This page was last edited on 22 Novemberat Reverse blocking capability adds to the forward voltage drop because of the need to have a long, low-doped P1 region. It is related to the gate turn-off GTO thyristor.
Gate drive electronics are integrated with the thyristor device. Asymmetrical IGCTs can be fabricated with a reverse conducting diode in the same package.
The close integration of the gate unit with the wafer device ensures fast commutation of the conduction current from the cathode to the gate. Usually, the reverse blocking voltage rating and forward blocking voltage rating are the same.
Integrated gate-commutated thyristor – Wikipedia
The drive circuit PCB is integrated into the package of the device. Integrated gate-commutated thyristor Type Passive First production ABB Mitsubishi Pin vss anodegate and cathode Electronic symbol The integrated gate-commutated thyristor IGCT is a power semiconductor electronic device, used for switching electric current in industrial equipment.
It was jointly developed by Mitsubishi and ABB. The integrated gate-commutated thyristor IGCT is a power semiconductor electronic device, used for switching electric current in industrial equipment. In an IGCT, the gate turn-off current is greater than the anode current.
The drive circuit surrounds the device and a large iggbt conductor attaching to the edge of the IGCT is used. IGCT are available with or without reverse blocking capability.